2SC3931 Datasheet, PDF (3/3 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer type(For high-frequency amplification)

Transistor
C_ob — V_CB
1.2
I_E=0
f=1MHz
Ta=25˚C
1.0
0.8
0.6
0.4
0.2
0
0 5 10 15 20 25 30
Collector to base voltage V_CB (V)
b_ie — g_ie
20 _yie=gie+jbie
18 ^VCE=10V
16
–4mA
–7mA
150
100
–2mA
14
100
12
58
10
–1mA
8
58
6
25
4
25
2
f=10.7MHz
0
0
3
6
9
12 15
Input conductance g_ie (mS)
b_oe — g_oe
1.2
150
–2mA
1.0
–4mA
100
0.8
–7mA
0.6
58
0.4
25
0.2
0
0
f=10.7MHz
2
4
y_oe=g_oe+jb_oe
V_CE=10V
6
8
10
Output conductance g_oe (mS)
PG — I_E
40
f=100MHz
35
R_g=50Ω
Ta=25˚C
30
V_CE=10V
25
6V
20
15
10
5
0
– 0.1 – 0.3 –1 –3 –10 –30 –100
Emitter current I_E (mA)
2SC3931
NF — I_E
12
f=100MHz
R_g=50kΩ
Ta=25˚C
10
8
6
4
V_CE=6V, 10V
2
0
– 0.1 – 0.3 –1 –3 –10 –30 –100
Emitter current I_E (mA)
b_re — g_re
0
y_re=g_re+jb_re
V_CE=10V
–1
10.7
25
–4mA
–2
–1mA
58
I_E=–7mA
–3
–4
100
b_fe — g_fe
0
– 0.4mA
–1mA
–20
150
100
–2mA
10.7
58
–40
150 _{–4mA 100}
58
–60
f=150MHz
I_E=–7mA
100
–80
–5
f=150MHz
–6
– 0.5 – 0.4 – 0.3 – 0.2 – 0.1 0
Reverse transfer conductance g_re (mS)
–100
–120
0
y_fe=g_fe+jb_fe
V_CE=10V
20 40 60 80 100
Forward transfer conductance g_fe (mS)
3