2SC3931 Datasheet, PDF (2/3 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer type(For high-frequency amplification)

Transistor
P_C — Ta
240
200
160
120
80
40
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
I_C — V_BE
30
V_CE=6V
25˚C
25
Ta=75˚C –25˚C
20
15
10
5
0
0
0.4 0.8 1.2 1.6 2.0
Base to emitter voltage V_BE (V)
1200
1000
f_T — I_E
V_CB=6V
Ta=25˚C
800
600
400
200
0
– 0.1 – 0.3 –1 –3 –10 –30 –100
Emitter current I_E (mA)
I_C — V_CE
12
Ta=25˚C
10
I_B=100µA
80µA
8
60µA
6
40µA
4
20µA
2
0
0
6
12
18
Collector to emitter voltage V_CE (V)
V_CE(sat) — I_C
100
I_C/I_B=10
30
10
3
1
0.3
25˚C ^Ta=75˚C
0.1
0.03
–25˚C
0.01
0.1 0.3 1 3 10 30 100
Collector current I_C (mA)
Z_rb — I_E
120
V_CB=6V
f=2MHz
Ta=25˚C
100
80
60
40
20
0
– 0.1 – 0.3
–1
–3
–10
Emitter current I_E (mA)
2SC3931
I_C — I_B
12
V_CE=6V
Ta=25˚C
10
8
6
4
2
0
0
60
120
180
Base current I_B (µA)
h_FE — I_C
360
V_CE=6V
300
240
Ta=75˚C
180
25˚C
–25˚C
120
60
0
0.1 0.3 1 3 10 30 100
Collector current I_C (mA)
C_re — V_CE
2.4
I_C=1mA
f=10.7MHz
Ta=25˚C
2.0
1.6
1.2
0.8
0.4
0
0.1 0.3 1 3 10 30 100
Collector to emitter voltage V_CE (V)
2