2SC3930 Datasheet, PDF (3/3 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer type(For high-frequency amplification)

Transistor
C_re — V_CE
3.0
f=10.7MHz
Ta=25˚C
2.5
2.0
I_C=3mA
1mA
1.5
1.0
0.5
0
0.1 0.3 1 3 10 30 100
Collector to emitter voltage V_CE (V)
PG — I_E
24
V_CE=10V
f=100MHz
Ta=25˚C
20
16
12
8
4
0
– 0.1 – 0.3 –1 –3 –10 –30 –100
Emitter current I_E (mA)
2SC3930
NF — I_E
12
V_CB=6V
f=100MHz
10
R_g=50Ω
Ta=25˚C
8
6
4
2
0
– 0.1 – 0.3
–1
–3
–10
Emitter current I_E (mA)
b_ie — g_ie
24
V_ie=g_ie+jb_ie
V_CE=10V
20
–4mA
–7mA
100
16
–2mA
58
12
8
4
f=10.7MHz
0
0
8
16 24 32 40
Input conductance g_ie (mS)
b_oe — g_oe
1.2
y_oe=g_oe+jb_oe
V_CE=10V
1.0
0.8 I_E=–1mA
100
0.6
58
0.4
0.2
f=10.7MHz
0
0
0.1 0.2 0.3 0.4 0.5
Output conductance g_oe (mS)
b_re — g_re
0
– 0.1
y_re=g_re+jbre
V_CE=10V
f=10.7MHz
– 0.2
I_E=–1mA
b_fe — g_fe
0
– 0.1mA
f=10.7MHz
10.7
58
–20
–1mA ₁₀₀
58
–40
–2mA ₁₀₀
– 0.3
58
– 0.4
100
– 0.5
– 0.6
– 0.5 – 0.4 – 0.3 – 0.2 – 0.1 0
Reverse transfer conductance g_re (mS)
–60
–80
I_E=–4mA
100
58
–100
–120
0
y_fe=g_fe+jb_fe
V_CE=10V
20 40 60 80 100
Forward transfer conductance g_fe (mS)
3