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2SC3930 Datasheet, PDF (2/3 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer type(For high-frequency amplification) | |||
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Transistor
PC â Ta
240
200
160
120
80
40
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (ËC)
IB â VBE
120
VCE=10V
Ta=25ËC
100
80
60
40
20
0
0
0.2 0.4 0.6 0.8 1.0
Base to emitter voltage VBE (V)
hFE â IC
240
VCE=10V
200
160
Ta=75ËC
25ËC
120
â25ËC
80
40
0
0.1 0.3 1 3 10 30 100
Collector current IC (mA)
IC â VCE
12
Ta=25ËC
10
IB=100µA
8
80µA
60µA
6
4
40µA
2
20µA
0
0
6
12
18
Collector to emitter voltage VCE (V)
IC â VBE
60
VCE=10V
50
25ËC
40
Ta=75ËC â25ËC
30
20
10
0
0
0.4 0.8 1.2 1.6 2.0
Base to emitter voltage VBE (V)
fT â IE
400
VCB=10V
350
f=100MHz
Ta=25ËC
300
250
200
150
100
50
0
â 0.1 â 0.3 â1 â3 â10 â30 â100
Emitter current IE (mA)
2SC3930
IC â IB
15.0
12.5
VCE=10V
Ta=25ËC
10.0
7.5
5.0
2.5
0
0
20 40 60 80 100
Base current IB (µA)
VCE(sat) â IC
100
IC/IB=10
30
10
3
1
0.3
Ta=75ËC
25ËC
0.1
â25ËC
0.03
0.01
0.1 0.3 1 3 10 30 100
Collector current IC (mA)
Zrb â IE
60
VCB=10V
f=2MHz
Ta=25ËC
50
40
30
20
10
0
â 0.1 â 0.3
â1
â3
â10
Emitter current IE (mA)
2
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