XP4506 Datasheet, PDF (2/2 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer transistor

Composite Transistors
P_T — Ta
250
200
150
100
50
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
V_CE(sat) — I_C
10
IC/IB=10
1
0.1
Ta=75˚C
25˚C
0.01
– 25˚C
0.001
0.1
1
10
100
Collector current IC (mA)
C_ob — V_CB
20
f=1MHz
Ta=25˚C
16
12
8
4
0
1
10
100
Collector to base voltage VCB (V)
I_C — V_CE
24
Ta=25˚C
20
IB=10µA
16
8µA
12
6µA
8
4µA
4
2µA
0
0 2 4 6 8 10 12
Collector to emitter voltage VCE (V)
2000
h_FE — I_C
VCE=2V
1600
1200
800
25˚C
Ta=75˚C
– 25˚C
400
0
0.1
1
10
100
Collector current IC (mA)
XP4506
I_C — V_BE
120
VCE=2V
100
25˚C
Ta=75˚C
80
– 25˚C
60
40
20
0
0
0.2 0.4 0.6 0.8 1.0
Base to emitter voltage VBE (V)
f_T — I_E
200
VCB=6V
Ta=25˚C
160
120
80
40
0
– 0.1
–1
–10
–100
Emitter current IE (mA)
2