XP4506 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer transistor

Composite Transistors
XP4506
Silicon NPN epitaxial planer transistor
For amplification of low frequency output
s ^Features
q High emitter to base voltage V_EBO.
q High forward current transfer ratio h_FE.
q Low ON resistor R_on.
2.1±0.1
0.425 1.25±0.1 0.425
1
6
2
5
3
4
Unit: mm
s ^{Basic Part Number of Element}
q 2SD1915F × 2 elements
0.2±0.1
s ^{Absolute Maximum Ratings (Ta=25˚C)}
Parameter
Symbol
Ratings
Unit
Collector to base voltage V_CBO
50
V
Collector to emitter voltage
Rating
V_CEO
20
V
of
Emitter to base voltage
V_EBO
25
V
element _{Collector current}
I_C
300
mA
Peak collector current
I_CP
500
mA
Total power dissipation
P_T
150
mW
Overall Junction temperature
T_j
150
˚C
Storage temperature
T_stg
–55 to +150
˚C
1 : Emitter (Tr1) 4 : Emitter (Tr2)
2 : Base (Tr1) 5 : Base (Tr2)
3 : Collector (Tr2) 6 : Collector (Tr1)
EIAJ : SC–88
S–Mini Type Package (6–pin)
Marking Symbol: EN
Internal Connection
Tr1
1
6
2
5
3
4
Tr2
s ^{Electrical Characteristics (Ta=25˚C)}
Parameter
Symbol
Conditions
min
Collector to emitter voltage
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
ON Resistance
*1 _{Ron measuring circuit}
V_CEO
I_CBO
I_EBO
h_FE
V_BE
V_CE(sat)
f_T
C_ob
R_on*1
IB=1mA
I_C = 1mA, I_B = 0
20
V_CB = 50V, I_E = 0
V_EB = 25V, I_C = 0
V_CE = 2V, I_C = 4mA
500
V_CE = 2V, I_C = 4mA
I_C = 30mA, I_B = 3mA
V_CB = 6V, I_E = –4mA, f = 200MHz
V_CB = 10V, I_E = 0, f = 1MHz
1kΩ
typ max Unit
V
0.1
µA
0.1
µA
2500
0.6
V
0.1
V
80
MHz
7
pF
1
Ω
VB
VA
VV
f=1kHz
V=0.3V
Ron=
VB
VA–VB
!1000(Ω)
1