XP111H Datasheet, PDF (2/2 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planer transistor

Composite Transistors
P_T — Ta
250
200
150
100
50
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
XP111H
–120
–100
I_C — V_CE
Ta=25˚C
– 80
IB= – 0.5mA
– 0.4mA
– 60
– 0.3mA
– 40
– 0.2mA
– 20
– 0.1mA
0
0 –2 –4 –6 –8 –10 –12
Collector to emitter voltage VCE (V)
–100
–10
V_CE(sat) — I_C
IC/IB=10
–1
– 0.1
Ta=75˚C
25˚C
– 25˚C
– 0.01
–1 –3 –10 –30 –100 –300 –1000
Collector current IC (mA)
h_FE — I_C
240
VCE= –10V
200
160
Ta=75˚C
120
25˚C
80
– 25˚C
40
0
–0.1 –0.3 –1 –3 –10 –30 –100
Collector current IC (mA)
C_ob — V_CB
6
f=1MHz
IE=0
Ta=25˚C
5
4
3
2
1
0
–1
–3
–10
– 30
–100
Collector to base voltage VCB (V)
–100
–10
V_IN — I_O
VO= – 0.2V
Ta=25˚C
–1
– 0.1
– 0.01
–0.1 –0.3 –1 –3 –10 –30 –100
Output current IO (mA)
2