XP111H Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planer transistor

Composite Transistors
XP111H
Silicon PNP epitaxial planer transistor
For switching/digital circuits
s ^Features
q Two elements incorporated into one package.
(Emitter-coupled transistors with built-in resistor)
q Reduction of the mounting area and assembly cost by one half.
2.1±0.1
0.425 ^1.25±0.1 0.425
1
5
2
3
4
Unit: mm
s ^{Basic Part Number of Element}
q UN111H × 2 elements
0.2±0.1
s ^{Absolute Maximum Ratings (Ta=25˚C)}
Parameter
Symbol
Ratings
Unit
Rating ^{Collector to base voltage}
V_CBO
–50
V
of
Collector to emitter voltage V_CEO
–50
V
element _{Collector current}
I_C
–100
mA
Total power dissipation
P_T
150
mW
Overall Junction temperature
T_j
150
˚C
Storage temperature
T_stg
–55 to +150
˚C
1 : Base (Tr1)
2 : Emitter
3 : Base (Tr2)
4 : Collector (Tr2)
5 : Collector (Tr1)
EIAJ : SC–88A
S–Mini Type Package (5–pin)
Marking Symbol: 9X
Internal Connection
Tr1
1
5
2
3
s ^{Electrical Characteristics (Ta=25˚C)}
Parameter
Symbol
Conditions
Collector to base voltage
Collector to emitter voltage
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Forward current transfer h_FE ratio
Collector to emitter saturation voltage
Output voltage high level
Output voltage low level
Transition frequency
Input resistance
Resistance ratio
*1 _{Ratio between 2 elements}
V_CBO
V_CEO
I_CBO
I_CEO
I_EBO
h_FE
h_FE (small/large)^*1
V_CE(sat)
V_OH
V_OL
f_T
R₁
R₁/R₂
I_C = –10µA, I_E = 0
I_C = –2mA, I_B = 0
V_CB = –50V, I_E = 0
V_CE = –50V, I_B = 0
V_EB = –6V, I_C = 0
V_CE = –10V, I_C = –5mA
V_CE = –10V, I_C = –5mA
I_C = –10mA, I_B = – 0.3mA
V_CC = –5V, V_B = – 0.5V, R_L = 1kΩ
V_CC = –5V, V_B = –2.5V, R_L = 1kΩ
V_CB = –10V, I_E = 1mA, f = 200MHz
min
–50
–50
30
0.5
–4.9
–30%
0.17
4
Tr2
typ max Unit
V
V
– 0.1 µA
– 0.5 µA
– 0.5 mA
0.99
– 0.25 V
V
– 0.2
V
80
MHz
2.2 +30% kΩ
0.22 0.27
1