XP06534 Datasheet, PDF (2/3 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planar type

XP06534
P_T  T_a
250
200
150
100
50
0
0
40
80
120
160
Ambient temperature T_a (°C)
I_C  V_CE
12
T_a = 25°C
10
I_B = 100 µA
80 µA
8
60 µA
6
40 µA
4
20 µA
2
0
0
6
12
18
Collector-emitter voltage V_CE (V)
I_C  I_B
12
VCE = 6 V
Ta = 25°C
10
8
6
4
2
0
0
40
80
120
160
Base current I_B (µA)
I_C  V_BE
30
VCE = 6 V
25°C
25
Ta = 75°C
−25°C
20
15
10
5
0
0 0.4 0.8 1.2 1.6 2.0
Base-emitter voltage V_BE (V)
V_CE(sat)  I_C
100
I_C / I_B = 10
10
1
0.1 _{Ta = 75°C}
25°C
−25°C
0.01
0.1
1
10
100
Collector current I_C (mA)
h_FE  I_C
360
V_CE = 6 V
300
240
180
T_a = 75°C
25°C
120
−25°C
60
0
0.1
1
10
100
Collector current I_C (mA)
1 200
1 000
f_T  I_E
VCB = 6 V
Ta = 25°C
800
600
400
200
0
− 0.1
−1
−10
−100
Emitter current I_E (mA)
Z_rb  I_E
120
VCB = 6 V
f = 2 MHz
100
Ta = 25°C
80
60
40
20
0
− 0.1
−1
−10
Emitter current I_E (mA)
C_re  V_CE
2.4
IC = 1 mA
f = 10.7 MHz
2.0
Ta = 25°C
1.6
1.2
0.8
0.4
0
0.1
1
10
100
Collector-emitter voltage V_CE (V)
2
SJJ00216BED