XP06534 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planar type

Composite Transistors
XP06534 (XP6534)
Silicon NPN epitaxial planar type
For high-frequency amplification
■ Features
• Two elements incorporated into one package
• Reduction of the mounting area and assembly cost by one half
■ Basic Part Number
• 2SC2404 × 2
■ Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) V_CBO
30
V
Collector-emitter voltage (Base open) V_CEO
20
V
Emitter-base voltage (Collector open) V_EBO
3
V
Collector current
I_C
15
mA
Total power dissipation
P_T
150
mW
Junction temperature
T_j
150
°C
Storage temperature
T_stg −55 to +150 °C
0.2±0.05
6
5
4
1
23
(0.65) (0.65)
1.3±0.1
2.0±0.1
10˚
Unit: mm
0.12^{+–00..0025}
1: Emitter (Tr1)
2: Emitter (Tr2)
3: Base (Tr2)
EIAJ: SC-88
4: Collector (Tr2)
5: Base (Tr1)
6: Collector (Tr1)
SMini6-G1 Package
Marking Symbol: 7F
Internal Connection
654
Tr1
Tr2
123
■ Electrical Characteristics T_a = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base voltage (Emitter open) V_CBO I_C = 10 µA, I_E = 0
30
V
Emitter-base voltage (Collector open) V_EBO I_E = 10 µA, I_C = 0
3
V
Base-emitter voltage
V_BE V_CB = 6 V, I_E = −1 mA
720
mV
Forward current transfer ratio
h_FE V_CB = 6 V, I_E = −1 mA
40
250

Transition frequency
f_T
V_CB = 6 V, I_E = −1 mA, f = 200 MHz
450 650
MHz
Reverse transfer capacitance
C_re V_CB = 6 V, I_E = −1 mA, f = 10.7 MHz
0.8
pF
(Common emitter)
Power gain
Noise figure
G_P V_CB = 6 V, I_E = −1 mA, f = 100 MHz
24
dB
NF V_CB = 6 V, I_E = −1 mA, f = 100 MHz
3.3
dB
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: March 2004
Note) The part number in the parenthesis shows conventional part number.
SJJ00216BED
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