XP04878 Datasheet, PDF (2/3 Pages) Panasonic Semiconductor – Silicon N-channel MOSFET

XP04878
P_T  T_a
160
120
80
40
0
0
40
80
120
160
Ambient temperature T_a (°C)
Y_fs  V_GS
VDS = 3 V
0.16 _{f = 1 MHz}
Ta = 25°C
0.12
0.08
0.04
0
0
1.0
2.0
3.0
Gate-source voltage V_GS (V)
I_D  V_DS
70
T_a = 25°C
60
V_GS = 2.0 V
50
1.9 V
40
1.8 V
30
1.7 V
20
1.6 V
10
1.5 V
0
0 2 4 6 8 10 12
Drain-source voltage V_DS (V)
I_D  V_GS
250
V_DS = 3 V
T_a = −25°C
200
25°C
75°C
150
100
50
0
0
1.0
2.0
3.0
Gate-source voltage V_GS (V)
R_DS(on)  V_GS
60
ID = 10 mA
50
40
30
20
10
Ta = 75°C
25°C
−25°C
0
0
2
4
6
Gate-source voltage V_GS (V)
V_IN  I_O
10
VO = 5 V
T_a = 25°C
1
10 ^−1
1
10
10²
Output current I_O (mA)
2
SJJ00263BED