XP04878 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon N-channel MOSFET

Composite Transistors
XP04878
Silicon N-channel MOSFET
For switching
■ Features
• Allowing 2.5 V drive
• Incorporating a built-in gate protection-diode
• S-Mini type 6-pin package, reduction of the mounting area and
assembly cost by one half
■ Basic Part Number
• 2SK3539 × 2
0.2±0.05
6
5
4
1
23
(0.65) (0.65)
1.3±0.1
2.0±0.1
10˚
Unit: mm
0.12^{+–00..0025}
■ Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Drain-source surrender voltage
Gate-source voltage (Drain open)
Drain current
Peak drain current
Total power dissipation
Channel temperature
Storage temperature
V_DSS
50
V
V_GSO
±7
V
I_D
100
mA
I_DP
200
mA
P_T
150
mW
T_ch
150
°C
T_stg −55 to +150 °C
1: Source (FET1)
2: Gate (FET1)
3: Drain (FET2)
EIAJ: SC-88
Marking Symbol: 7Y
4: Source (FET2)
5: Gate (FET2)
6: Drain (FET1)
SMini6-G1 Package
Internal Connection
654
■ Electrical Characteristics T_a = 25°C ± 3°C
123
Parameter
Symbol
Conditions
Min Typ Max Unit
Drain-source surrender voltage
Drain-source cutoff current
Gate-source cutoff current
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Short-circuit forward transfer
capacitance (Common-source)
V_DSS
I_DSS
I_GSS
V_th
R_DS(on)
Y_fs
C_iss
I_D = 10 µA, V_GS = 0
V_DS = 50 V, V_GS = 0
V_GS = ±7 V, V_DS = 0
I_D = 1 µA, V_DS = 3 V
I_D = 10 mA, V_GS = 2.5 V
I_D = 10 mA, V_GS = 4.0 V
I_D = 10 mA, V_GS = 4.0 V
V_DS = 3 V, V_GS = 0 V, f = 1 MHz
50
V
1.0
µA
±5
µA
0.9 1.2 1.5
V
8
15
Ω
6
12
20 60
mS
12
pF
Short-circuit output capacitance
C_oss
(Common-source)
7
pF
Reverse transfer capacitance
C_rss
(Common-source)
3
pF
Turn-on time
Turn-off time
t_on
V_DD = 3 V, V_GS = 0 V to 3 V, R_L = 470 Ω
200
ns
t_off
V_DD = 3 V, V_GS = 3 V to 0 V, R_L = 470 Ω
200
ns
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors.
Publication date: December 2003
SJJ00263BED
1