XP0111F Datasheet, PDF (2/3 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planar type

XP0111F
P_T  T_a
250
200
150
100
50
0
0
40
80
120
160
Ambient temperature T_a (°C)
−240
−200
−160
I_C  V_CE
Ta = 25°C
IB = −1.0 mA
− 0.9 mA
− 0.8 mA
− 0.7 mA
− 0.6 mA
−120
− 0.5 mA
−80
− 0.4 mA
− 0.3 mA
−40
− 0.2 mA
0
− 0.1 mA
0 −2 −4 −6 −8 −10 −12
Collector-emitter voltage V_CE (V)
V_CE(sat)  I_C
−100
IC / IB = 10
−10
−1
Ta = 75°C
25°C
− 0.1
−25°C
− 0.01
− 0.1
−1
−10
−100
Collector current I_C (mA)
h_FE  I_C
160
VCE = −10 V
120
Ta = 75°C
25°C
80
−25°C
40
0
−1
−10
−100
−1 000
Collector current I_C (mA)
C_ob  V_CB
6
f = 1 MHz
IE = 0
Ta = 25°C
5
4
3
2
1
0
− 0.1
−1
−10
−100
Collector-base voltage V_CB (V)
I_O  V_IN
−10⁴
VO = −5 V
T_a = 25°C
−10³
−10²
−10
−1
− 0.4 − 0.6 − 0.8 −1.0 −1.2 −1.4
Input voltage V_IN (V)
V_IN  I_O
−100
VO = − 0.2 V
Ta = 25°C
−10
−1
− 0.1
− 0.01
− 0.1
−1
−10
−100
Output current I_O (mA)
2
SJJ00132BED