XP0111F Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planar type

Composite Transistors
XP0111F (XP111F)
Silicon PNP epitaxial planar type
For switching/digital circuits
■ Features
• Two elements incorporated into one package
(Emitter-coupled transistors with built-in resistor)
• Reduction of the mounting area and assembly cost by one half
■ Basic Part Number
• UNR211F (UN211F) × 2
■ Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) V_CBO
−50
V
Collector-emitter voltage (Base open) V_CEO
−50
V
Collector current
I_C
−100
mA
Total power dissipation
Junction temperature
Storage temperature
P_T
150
mW
T_j
150
°C
T_stg −55 to +150 °C
0.20±0.05
5
4
Unit: mm
0.12^{+–00..0025}
1
2
3
(0.65) (0.65)
1.3±0.1
2.0±0.1
10˚
1: Base (Tr1)
2: Emitter
3: Base (Tr2)
EIAJ: SC-88A
4: Collector (Tr2)
5: Collector (Tr1)
SMini5-G1 Package
Marking Symbol: 7O
Internal Connection
5
4
Tr1
Tr2
■ Electrical Characteristics T_a = 25°C ± 3°C
123
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
h_FE Ratio ^*
V_CBO
V_CEO
I_CBO
I_CEO
I_EBO
h_FE
h_FE(Small
I_C = −10 µA, I_E = 0
I_C = −2 mA, I_B = 0
V_CB = −50 V, I_E = 0
V_CE = −50 V, I_B = 0
V_EB = −6 V, I_C = 0
V_CE = −10 V, I_C = −5 mA
V_CE = −10 V, I_C = −5 mA
−50
V
−50
V
− 0.1 µA
− 0.5 µA
−1.0 mA
30

0.50 0.99

Collector-emitter saturation voltage
Output voltage high-level
Output voltage low-level
Input resistance
Resistance ratio
Transition frequency
/Large)
V_CE(sat)
V_OH
V_OL
R₁
R₁ / R₂
f_T
I_C = −10 mA, I_B = − 0.3 mA
V_CC = −5 V, V_B = − 0.5 V, R_L = 1 kΩ
V_CC = −5 V, V_B = −2.5 V, R_L = 1 kΩ
−4.9
−30%
0.37
V_CB = −10 V, I_E = 1 mA, f = 200 MHz
− 0.25
− 0.2
4.7 +30%
0.47 0.57
80
V
V
V
kΩ

MHz
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. _*: Ratio between 2 elements
Note) The part number in the parenthesis shows conventional part number.
Publication date: February 2004
SJJ00132BED
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