XN5553 Datasheet, PDF (2/2 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer transistor

Composite Transistors
P_T — Ta
500
400
300
200
100
0
0
40
80
120
160
Ambient temperature Ta (˚C)
I_C — V_CE
80
Ta=25˚C
60
IB=100µA
80µA
60µA
50µA
40µA
40
30µA
20µA
20
10µA
0
0 2 4 6 8 10 12
Collector to emitter voltage VCE (V)
V_CE(sat) — I_C
100
IC/IB=10
30
10
3
1
0.3
25˚C
0.1
Ta=75˚C
– 25˚C
0.03
0.01
0.1 0.3 1 3 10 30 100
Collector current IC (mA)
1800
1500
1200
900
h_FE — I_C
VCE=10V
Ta=75˚C
25˚C
– 25˚C
600
300
0
0.1 0.3 1 3 10 30 100
Collector current IC (mA)
C_ob — V_CB
6
f=1MHz
IE=0
Ta=25˚C
5
4
3
2
1
0
1 2 3 5 10 20 30 50 100
Collector to base voltage VCB (V)
NV — I_C
100
VCE=10V
GV=80dB
Function=FLAT
80 ^Ta=25˚C
Rg=100kΩ
60
22kΩ
40
5kΩ
20
0
0.01 0.03
0.1
0.3
1
Collector current IC (mA)
XN5553
I_C — V_BE
60
VCE=10V
25˚C
50
Ta=75˚C
40
– 25˚C
30
20
10
0
0
0.4 0.8 1.2 1.6 2.0
Base to emitter voltage VBE (V)
f_T — I_E
200
VCB=10V
Ta=25˚C
160
120
80
40
0
–0.1 –0.3 –1 –3 –10 –30 –100
Emitter current IE (mA)
NV — V_CE
100
Rg=100kΩ
80
60
22kΩ
40
5kΩ
20
IC=1mA
GV=80dB
Function=FLAT
0
Ta=25˚C
1 2 3 5 10 20 30 50 100
Collector to emitter voltage VCE (V)
2