XN5553 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer transistor

Composite Transistors
XN5553
Silicon NPN epitaxial planer transistor
For amplification of the low frequency
s ^Features
q Two elements incorporated into one package.
q Reduction of the mounting area and assembly cost by one half.
0.65±0.15
6
5
4
2.8
+0.2
–0.3
1.5
+0.25
–0.05
Unit: mm
0.65±0.15
1
2
3
s ^{Basic Part Number of Element}
q 2SD1149 × 2 elements
s ^{Absolute Maximum Ratings (Ta=25˚C)}
Parameter
Symbol
Ratings
Unit
Collector to base voltage V_CBO
100
V
Rating ^{Collector to emitter voltage}
V_CEO
100
V
of
Emitter to base voltage
V_EBO
15
V
element _{Collector current}
I_C
20
mA
Peak collector current
I_CP
50
mA
Total power dissipation
P_T
300
mW
Overall Junction temperature
T_j
150
˚C
Storage temperature
T_stg
–55 to +150
˚C
0.1 to 0.3
0.4±0.2
1 : Collector (Tr1)
2 : Emitter (Tr2)
3 : Collector (Tr2)
4 : Base (Tr2)
5 : Base (Tr1)
6 : Emitter (Tr1)
EIAJ : SC–74
Mini Type Package (6–pin)
Marking Symbol: 4U
Internal Connection
Tr1
6
1
5
2
4
3
Tr2
s ^{Electrical Characteristics (Ta=25˚C)}
Parameter
Symbol
Conditions
min
Collector to base voltage
V_CBO
I_C = 10µA, I_E = 0
100
Collector to emitter voltage
V_CEO
I_C = 1mA, I_B = 0
100
Emitter to base voltage
V_EBO
I_E = 10µA, I_C = 0
15
Collector cutoff current
I_CBO
V_CB = 60V, I_E = 0
I_CEO
V_CE = 60V, I_B = 0
Forward current transfer ratio
h_FE
V_CE = 10V, I_C = 2mA
400
Collector to emitter saturation voltage V_CE(sat)
I_C = 10mA, I_B = 1mA
Noise voltage
NV
V_CE = 10V, I_C = 1mA, G_V = 80dB
R_g = 100KΩ, Function = FLAT
Transition frequency
f_T
V_CB = 10V, I_E = –2mA, f = 200MHz
typ max Unit
V
V
V
0.1
µA
1.0
µA
2000
0.05
0.2
V
80
mV
150
MHz
1