XN5531 Datasheet, PDF (2/2 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer transistor

Composite Transistors
P_T — Ta
240
200
160
120
80
40
0
0
40
80
120
160
Ambient temperature Ta (˚C)
V_CE(sat) — I_C
100
IC/IB=10
30
10
3
1
0.3
Ta=75˚C
0.1
25˚C
0.03
– 25˚C
0.01
0.1 0.3 1 3 10 30 100
Collector current IC (mA)
C_ob — V_CB
1.6
f=1MHz
1.4
IE=0
Ta=25˚C
1.2
1.0
0.8
0.6
0.4
0.2
0
1
3
10
30
100
Collector to base voltage VCB (V)
I_C — V_CE
80
Ta=25˚C
60
IB=500µA
40
400µA
300µA
200µA
20
100µA
0
0 2 4 6 8 10 12
Collector to emitter voltage VCE (V)
h_FE — I_C
360
VCE=4V
300
Ta=75˚C
240
25˚C
180
120
– 25˚C
60
0
0.1 0.3 1 3 10 30 100
Collector current IC (mA)
XN5531
I_C — V_BE
60
25˚C
VCE=4V
50
Ta=75˚C –25˚C
40
30
20
10
0
0
0.4 0.8 1.2 1.6 2.0
Base to emitter voltage VBE (V)
f_T — I_E
4.0
VCB=4V
Ta=25˚C
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
–0.1 –0.3 –1 –3 –10 –30 –100
Emitter current IE (mA)
2