XN5531 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer transistor

Composite Transistors
XN5531
Silicon NPN epitaxial planer transistor
For high frequency oscillation and mixing
s ^Features
q Two elements incorporated into one package.
q Reduction of the mounting area and assembly cost by one half.
0.65±0.15
6
5
4
2.8
+0.2
–0.3
1.5
+0.25
–0.05
Unit: mm
0.65±0.15
1
2
3
s ^{Basic Part Number of Element}
q 2SC3130 × 2 elements
s ^{Absolute Maximum Ratings (Ta=25˚C)}
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V_CBO
15
V
Rating _{Collector to emitter voltage VCEO}
10
V
of
element ^{Emitter to base voltage}
V_EBO
3
V
Collector current
I_C
50
mA
Total power dissipation
P_T
200
mW
Overall Junction temperature
T_j
150
˚C
Storage temperature
T_stg
–55 to +150
˚C
0.1 to 0.3
0.4±0.2
1 : Collector (Tr1)
2 : Emitter (Tr2)
3 : Collector (Tr2)
4 : Base (Tr2)
5 : Base (Tr1)
6 : Emitter (Tr1)
EIAJ : SC–74
Mini Type Package (6–pin)
Marking Symbol: 5M
Internal Connection
Tr1
6
1
5
2
4
s ^{Electrical Characteristics (Ta=25˚C)}
Parameter
Symbol
Conditions
min
Collector to emitter voltage
V_CEO
I_C = 2mA, I_B = 0
10
Emitter to base voltage
V_EBO
I_E = 10µA, I_C = 0
3
Collector cutoff current
I_CBO
V_CB = 10V, I_E = 0
I_CEO
V_CE = 10V, I_B = 0
Forward current transfer ratio
h_FE1
V_CE = 4V, I_C = 5mA
75
Forward current transfer h_FE ratio h_FE (small/large)^*1 V_CE = 4V, I_C = 5mA
0.5
h_FE2/h_FE1 ratio
V_CE = 4V, I_C = 100µA
h_FE2/h_FE1
V_CE = 4V, I_C = 5mA
0.75
Collector to emitter saturation voltage V_CE(sat)
I_C = 20mA, I_B = 4mA
Collector output capacitance
C_ob
V_CB = 4V, I_E = 0, f = 1MHz
Transition frequency
f_T
V_CB = 4V, I_E = –5mA, f = 200MHz
1.4
Collector to base parameter
r_bb'·C_C
V_CB = 4V, I_E = –5mA, f = 30MHz
Common base reverse transfer capacitance C_rb
V_CB = 4V, I_E = 0, f = 1MHz
*1 _{Ratio between 2 elements}
3
Tr2
typ max Unit
V
V
1
µA
10
µA
200 400
0.99
1.6
0.5
V
0.9
1.1
pF
1.9
2.5 GHz
11.8 13.5
ps
0.25 0.35
pF
1