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XN4401 Datasheet, PDF (2/3 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planer transistor | |||
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Composite Transistors
PT â Ta
500
400
300
200
100
0
0
40
80
120
160
Ambient temperature Ta (ËC)
IC â VCE
â 60
Ta=25ËC
â 50
IB= â 300µA
â 250µA
â 40
â 200µA
â 30
â150µA
â 20
â100µA
â 10
â 50µA
0
0 â2 â4 â6 â8 â10 â12 â14 â16 â18
Collector to emitter voltage VCE (V)
XN4401
IC â IB
â 60
VCE= â 5V
Ta=25ËC
â 50
â 40
â 30
â 20
â10
0
0
â100 â200 â300 â400
Base current IB (µA)
â 400
â 350
IB â VBE
VCE= â 5V
Ta=25ËC
â 300
â 250
â 200
â150
â100
â 50
0
0
â0.4 â0.8 â1.2 â1.6
Base to emitter voltage VBE (V)
â 240
â 200
â160
IC â VBE
VCE= â 5V
25ËC
Ta=75ËC â25ËC
â120
â 80
â 40
0
0 â0.4 â0.8 â1.2 â1.6 â2.0
Base to emitter voltage VBE (V)
VCE(sat) â IC
â10
IC/IB=10
â3
â1
25ËC Ta=75ËC
â 0.3
â 25ËC
â 0.1
â 0.03
â 0.01
â 0.003
â 0.001
â1 â3 â10 â30 â100 â300 â1000
Collector current IC (mA)
hFE â IC
600
VCE= â10V
500
400
Ta=75ËC
300 25ËC
â 25ËC
200
100
0
â1 â3 â10 â30 â100 â300 â1000
Collector current IC (mA)
fT â IE
160
VCB=â10V
Ta=25ËC
140
120
100
80
60
40
20
0
0.1 0.3 1 3 10 30 100
Emitter current IE (mA)
Cob â VCB
8
f=1MHz
IE=0
7
Ta=25ËC
6
5
4
3
2
1
0
â1 â2 â3 â5 â10 â20 â30 â50 â100
Collector to base voltage VCB (V)
2
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