XN4401 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planer transistor

Composite Transistors
XN4401
Silicon PNP epitaxial planer transistor
For general amplification
s ^Features
q Two elements incorporated into one package.
q Reduction of the mounting area and assembly cost by one half.
0.65±0.15
6
5
4
2.8
+0.2
–0.3
1.5
+0.25
–0.05
Unit: mm
0.65±0.15
1
2
3
s ^{Basic Part Number of Element}
q 2SB709A × 2 elements
s ^{Absolute Maximum Ratings (Ta=25˚C)}
Parameter
Symbol
Ratings
Unit
Collector to base voltage V_CBO
–60
V
Rating ^{Collector to emitter voltage}
V_CEO
–50
V
of
Emitter to base voltage
V_EBO
–7
V
element _{Collector current}
I_C
–100
mA
Peak collector current
I_CP
–200
mA
Total power dissipation
P_T
300
mW
Overall Junction temperature
T_j
150
˚C
Storage temperature
T_stg
–55 to +150
˚C
0.1 to 0.3
0.4±0.2
1 : Collector (Tr1)
2 : Base (Tr2)
3 : Emitter (Tr2)
4 : Collector (Tr2)
5 : Base (Tr1)
6 : Emitter (Tr1)
EIAJ : SC–74
Mini Type Package (6–pin)
Marking Symbol: 5K
Internal Connection
Tr1
6
1
5
2
4
3
Tr2
s ^{Electrical Characteristics (Ta=25˚C)}
Parameter
Symbol
Conditions
min
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector cutoff current
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
V_CBO
V_CEO
V_EBO
I_CBO
I_CEO
h_FE
V_CE(sat)
f_T
C_ob
I_C = –10µA, I_E = 0
–60
I_C = –2mA, I_B = 0
–50
I_E = –10µA, I_C = 0
–7
V_CB = –20V, I_E = 0
V_CE = –10V, I_B = 0
V_CE = –10V, I_C = –2mA
160
I_C = –100mA, I_B = –10mA
V_CB = –10V, I_E = 1mA, f = 200MHz
V_CB = –10V, I_E = 0, f = 1MHz
typ
– 0.3
80
2.7
max
– 0.1
–100
460
– 0.5
Unit
V
V
V
µA
µA
V
MHz
pF
1