XN4130 Datasheet, PDF (2/2 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planer transistor

Composite Transistors
P_T — Ta
500
400
300
200
100
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
XN4130
h_FE — I_C
300
VCE= –10V
250
Ta=75˚C
25˚C
200
– 25˚C
150
100
50
0
–1
–10
–100
–1000
Collector current IC (mA)
V_CE(sat) — I_C
–10
IC/IB=10
–1
– 0.1
Ta=75˚C
25˚C
– 25˚C
– 0.01
–1
–10
–100
–1000
Collector current IC (mA)
–100
– 87.5
–75
– 62.5
– 50
– 37.5
I_C — V_CE
Ta=25˚C
IB=–1.0mA
– 0.9mA
– 0.8mA
– 0.7mA
– 0.6mA
– 0.5mA
– 0.4mA
– 0.3mA
– 0.2mA
–25
–12.5
– 0.1mA
0
0 –2 –4 –6 –8 –10 –12
Collector to emitter voltage VCE (V)
–10000
–1000
I_O — V_IN
VO= – 5V
Ta=25˚C
–100
–10
V_IN — I_O
VO= – 0.2V
Ta=25˚C
–100
–1
–10
– 0.1
–1
–0.4 –0.6 –0.8 –1.0 –1.2 –1.4
Input voltage VIN (V)
– 0.01
– 0.1
–1
–10
–100
Output current IO (mA)
C_ob — V_CB
60
f=1MHz
IE=0
Ta=25˚C
50
40
30
20
10
0
–1
–10
–100
Collector to base voltage VCB (V)
2