XN4130 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planer transistor

Composite Transistors
XN4130
Silicon PNP epitaxial planer transistor
For amplification of low frequency output
s ^Features
q Two elements incorporated into one package.
(Transistors with built-in resistor)
q Reduction of the mounting area and assembly cost by one half.
0.65±0.15
6
5
4
2.8
+0.2
–0.3
1.5
+0.25
–0.05
Unit: mm
0.65±0.15
1
2
3
s ^{Basic Part Number of Element}
q UN1130 × 2 elements
s ^{Absolute Maximum Ratings (Ta=25˚C)}
Parameter
Symbol
Ratings
Unit
Collector to base voltage V_CBO
–15
V
Rating ^{Collector to emitter voltage}
V_CEO
–15
V
of
Emitter to base voltage
V_EBO
–7
V
element _{Collector current}
I_C
– 0.5
A
Peak collector current
I_CP
–1
A
Total power dissipation
P_T
300
mW
Overall Junction temperature
T_j
150
˚C
Storage temperature
T_stg
–55 to +150
˚C
0.1 to 0.3
0.4±0.2
1 : Collector (Tr1)
2 : Base (Tr2)
3 : Emitter (Tr2)
4 : Collector (Tr2)
5 : Base (Tr1)
6 : Emitter (Tr1)
EIAJ : SC–74
Mini Type Package (6–pin)
Marking Symbol: OF
Internal Connection
Tr1
6
1
5
2
4
3
Tr2
s ^{Electrical Characteristics (Ta=25˚C)}
Parameter
Symbol
Conditions
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector cutoff current
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
Base to emitter resistance
V_CBO
V_CEO
V_EBO
I_CBO
h_FE1
h_FE2
V_CE(sat)
V_BE(sat)
f_T
C_ob
R_BE
I_C = –10µA, I_E = 0
I_C = –1mA, I_B = 0
I_E = –1mA, I_C = 0
V_CB = –10V, I_E = 0
V_CE = –2V, I_C = –500mA*
V_CE = –2V, I_C = –1A*
I_C = –300mA, I_B = –6mA
I_C = –300mA, I_B = –6mA
V_CB = –10V, I_E = 50mA, f = 200MHz
V_CB = –10V, I_E = 0, f = 1MHz
min
–15
–15
–7
80
50
–30%
typ max Unit
V
V
V
– 0.1 µA
280
– 0.2 – 0.3
V
– 0.9 –1.3
V
130
MHz
22
pF
10 +30% kΩ
*Pulse measurement
1