XN1871 Datasheet, PDF (2/2 Pages) Panasonic Semiconductor – Silicon N-channel junction FET

Composite Transistors
P_T — Ta
500
400
300
200
100
0
0
40
80
120
160
Ambient temperature Ta (˚C)
gm — V_GS
20
VDS=10V
18
Ta=25˚C
16
14
12
IDSS=5.0mA
10
8
2.0mA
6
4
2
0
–0.8 –0.6 –0.4 –0.2
0
Gate to source voltage VGS (V)
C_rss — V_DS
5
VGS=3V
f=1MHz
Ta=25˚C
4
3
2
1
0
1 2 3 5 10 20 30 50 100
Drain to source voltage VDS (V)
I_D — V_DS
8
Ta=25˚C
7
6
VGS=0V
5
4
– 0.1V
3
2
– 0.2V
1
– 0.3V
– 0.4V
0
0 2 4 6 8 10 12
Drain to source voltage VDS (V)
gm — I_D
20
VDS=10V
18
Ta=25˚C
16
IDSS=5.0mA
14
12
2.0mA
10
8
6
4
2
0
0
2
4
6
8
Drain current ID (mA)
NF — f
12
VDS=10V
ID=5.2mA
Ta=25˚C
10
8
6
4
Rg=500Ω
2
1kΩ
0
10
100
1k
10k
100k
Frequency f (Hz)
XN1871
I_D — V_GS
9.6
VDS=10V
8.0
6.4
4.8
Ta=75˚C
3.2
25˚C
– 25˚C
1.6
0
–1.0 –0.8 –0.6 –0.4 –0.2 0
Gate to source voltage VGS (V)
C_iss, C_oss — V_DS
10
VGS=–3V
f=1MHz
Ta=25˚C
8
6
Ciss
4
2
Coss
0
1 2 3 5 10 20 30 50 100
Drain to source voltage VDS (V)
2