XN1507 Datasheet, PDF (2/2 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer transistor

Composite Transistors
P_T — Ta
500
400
300
200
100
0
0
40
80
120
160
Ambient temperature Ta (˚C)
V_CE(sat) — I_C
100
IC/IB=10
30
10
3
1
0.3
25˚C _Ta=75˚C
0.1
– 25˚C
0.03
0.01
0.1 0.3 1 3 10 30 100
Collector current IC (mA)
C_ob — V_CB
5
f=1MHz
IE=0
Ta=25˚C
4
3
2
1
0
1 2 3 5 10 20 30 50 100
Collector to base voltage VCB (V)
I_C — V_CE
120
Ta=25˚C
100
IB=2.0mA
1.8mA
1.6mA
80
1.4mA
1.2mA
1.0mA
0.8mA
60
0.6mA
0.4mA
40
0.2mA
20
0
0 2 4 6 8 10 12
Collector to emitter voltage VCE (V)
h_FE — I_C
600
VCE=10V
500
400
300
Ta=75˚C
25˚C
200
– 25˚C
100
0
0.1 0.3 1 3 10 30 100
Collector current IC (mA)
XN1507
I_C — V_BE
120
VCE=10V
100
25˚C
Ta=75˚C –25˚C
80
60
40
20
0
0
0.4 0.8 1.2 1.6 2.0
Base to emitter voltage VBE (V)
f_T — I_E
200
VCB=10V
Ta=25˚C
160
120
80
40
0
–1 –2 –3 –5 –10 –20 –30 –50 –100
Emitter current IE (mA)
2