XN1507 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer transistor

Composite Transistors
XN1507
Silicon NPN epitaxial planer transistor
For high break down voltage and low noise amplification
s ^Features
q Two elements incorporated into one package.
(Emitter-coupled transistors)
q Reduction of the mounting area and assembly cost by one half.
0.65±0.15
5
4
3
2.8
+0.2
-0.3
1.5
+0.25
-0.05
Unit: mm
0.65±0.15
1
2
s ^{Basic Part Number of Element}
q 2SD814 × 2 elements
s ^{Absolute Maximum Ratings (Ta=25˚C)}
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V_CBO
150
V
Rating ^{Collector to emitter voltage VCEO}
150
V
of
Emitter to base voltage
V_EBO
5
V
element
Collector current
I_C
50
mA
Peak collector current
I_CP
100
mA
Total power dissipation
P_T
300
mW
Overall Junction temperature
T_j
150
˚C
Storage temperature
T_stg
–55 to +150
˚C
0.1 to 0.3
0.4±0.2
1 : Collector (Tr1)
2 : Collector (Tr2)
3 : Base (Tr2)
4 : Emitter
5 : Base (Tr1)
EIAJ : SC–74A
Mini Type Pakage (5–pin)
Marking Symbol: 4O
Internal Connection
Tr1
5
1
4
3
2
Tr2
s ^{Electrical Characteristics (Ta=25˚C)}
Parameter
Symbol
Conditions
min
Collector to emitter voltage
V_CEO
I_C = 100µA, I_B = 0
150
Emitter to base voltage
V_EBO
I_E = 10µA, I_C = 0
5
Collector cutoff current
I_CBO
V_CB = 100V, I_E = 0
Forward current transfer ratio
h_FE
V_CE = 5V, I_C = 10mA
90
Forward current transfer h_FE ratio h_FE (small/large)^*1 V_CE = 5V, I_C = 10mA
0.5
Collector to emitter saturation voltage V_CE(sat)
I_C = 30mA, I_B = 3mA
Transition frequency
f_T
V_CB = 10V, I_E = –10mA, f = 200MHz
Collector output capacitance
C_ob
V_CB = 10V, I_E = 0, f = 1MHz
*1 _{Ratio between 2 elements}
typ max Unit
V
V
1
µA
450
0.99
1
V
150
MHz
2.3
pF
1