UP04315 Datasheet, PDF (2/4 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planar type Silicon PNP epitaxial planar type

UP04315
■ Electrical Characteristics (continued) T_a = 25°C ± 3°C
• Tr2
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base voltage (Emitter open) V_CBO I_C = −10 µA, I_E = 0
−50
V
Collector-emitter voltage (Base open) V_CEO I_C = −2 mA, I_B = 0
−50
V
Collector-base cutoff current (Emitter open) I_CBO V_CB = −50 V, I_E = 0
− 0.1 µA
Collector-emitter cutoff current (Base open) I_CEO V_CE = −50 V, I_B = 0
− 0.5 µA
Emitter-base cutoff current (Collector open) I_EBO V_EB = −6 V, I_C = 0
− 0.01 mA
Forward current transfer ratio
h_FE V_CE = −10 V, I_C = −5 mA
160
460

Collector-emitter saturation voltage
V_CE(sat) I_C = −10 mA, I_B = − 0.3 mA
− 0.25 V
Output voltage high level
V_OH V_CC = −5 V, V_B = − 0.5 V, R_L = 1 kΩ −4.9
V
Output voltage low level
V_OL V_CC = −5 V, V_B = −2.5 V, R_L = 1 kΩ
− 0.2 V
Input resistance
R₁
−30% 10 +30% kΩ
Transition frequency
f_T
V_CB = −10 V, I_E = 1 mA, f = 200 MHz
80
MHz
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Common characteristics chart
P_T  T_a
140
120
100
80
60
40
20
0
0 20 40 60 80 100 120 140
Ambient temperature T_a (°C)
Characteristics charts of Tr1
I_C  V_CE
140
Ta = 25°C
0.9 mA I_B = 1.0 mA
0.8 mA
120 0.7 mA
0.6 mA
0.5 mA
100
0.4 mA
0.3 mA
80
0.2 mA
60
40
0.1 mA
20
0
0 2 4 6 8 10 12
Collector-emitter voltage V_CE (V)
V_CE(sat)  I_C
1
I_C / I_B = 10
T_a = 75°C
0.1
25°C
−25˚C
0.01
1
10
100
1 000
Collector current I_C (mA)
h_FE  I_C
450
400 ^{Ta = 75°C}
VCE = 10 V
350
25°C
300
250
−25°C
200
150
100
50
0
1
10
100
1 000
Collector current I_C (mA)
2
SJJ00268BED