UP04315 Datasheet, PDF (1/4 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planar type Silicon PNP epitaxial planar type

Composite Transistors
UP04315
Silicon NPN epitaxial planar type (Tr1)
Silicon PNP epitaxial planar type (Tr2)
For switching/digital circuits
(0.30)
654
0.20^{+–00..0025}
Unit: mm
0.10±0.02
■ Features
• Two elements incorporated into one package
(Transistors with built-in resistor)
• Reduction of the mounting area and assembly cost by one half
■ Basic Part Number
• UNR2215 + UNR2115
5˚
123
(0.50)(0.50)
1.00±0.05
1.60±0.05
Display at No.1 lead
5˚
■ Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Tr1
Collector-base voltage
V_CBO
50
V
(Emitter open)
Collector-emitter voltage V_CEO
50
V
(Base open)
Collector current
I_C
100
mA
Tr2
Collector-base voltage
V_CBO
−50
V
(Emitter open)
Collector-emitter voltage V_CEO
−50
V
(Base open)
Collector current
I_C
−100
mA
Overall
Total power dissipation
Junction temperature
Storage temperature
P_T
125
mW
T_j
125
°C
T_stg −55 to +125 °C
1: Emitter (Tr1)
2: Base (Tr1)
3: Collector (Tr2)
4: Emitter (Tr2)
5: Base (Tr2)
6: Collector (Tr1)
SSMini6-F1 Package
Marking Symbol: CB
Internal Connection
654
Tr1
Tr2
123
■ Electrical Characteristics T_a = 25°C ± 3°C
• Tr1
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base voltage (Emitter open) V_CBO I_C = 10 µA, I_E = 0
50
V
Collector-emitter voltage (Base open) V_CEO I_C = 2 mA, I_B = 0
50
V
Collector-base cutoff current (Emitter open) I_CBO V_CB = 50 V, I_E = 0
0.1
µA
Collector-emitter cutoff current (Base open) I_CEO V_CE = 50 V, I_B = 0
0.5
µA
Emitter-base cutoff current (Collector open) I_EBO V_EB = 6 V, I_C = 0
0.01 mA
Forward current transfer ratio
h_FE V_CE = 10 V, I_C = 5 mA
160
460

Collector-emitter saturation voltage
V_CE(sat) I_C = 10 mA, I_B = 0.3 mA
0.25
V
Output voltage high level
V_OH V_CC = 5 V, V_B = 0.5 V, R_L = 1 kΩ
4.9
V
Output voltage low level
V_OL V_CC = 5 V, V_B = 2.5 V, R_L = 1 kΩ
0.2
V
Input resistance
R₁
−30% 10 +30% kΩ
Transition frequency
f_T
V_CB = 10 V, I_E = −2 mA, f = 200 MHz
150
MHz
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: June 2003
SJJ00268BED
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