MSG43001 Datasheet, PDF (2/4 Pages) Panasonic Semiconductor – SiGe HBT type For low-noise RF amplifier

MSG43001
P_C  T_a
120
80
40
0
0
40
80
120
Ambient temperature T_a (°C)
f_T  I_C
25
VCE = 3 V
f = 2 GHz
20
15
10
5
0
1
10
100
Collector current I_C (mA)
S_21e²  I_C
VCE = 3 V
f = 2 GHz
12
I_C  V_CE
IB = 80 µA
12
70 µA
60 µA
8
50 µA
40 µA
30 µA
4
20 µA
10 µA
0
0
2
4
6
Collector-emitter voltage V_CE (V)
C_ob  V_CB
0.8
f = 1 MHz
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
2
4
6
Collector-base voltage V_CB (V)
NF  I_C
VCE = 3 V
f = 2 GHz
6
h_FE  I_C
V_CE = 3 V
160
120
80
40
0
0.01
0.1
1
10
100
Collector current I_C (mA)
G_P  I_C
15
VCE = 3 V
f = 2 GHz
10
5
0
–5
–10
0.1
1
10
100
Collector current I_C (mA)
S₁₁ , S₂₂
1.0
V_CE = 3 V
I_C = 10 mA
0.5
2.0
8
4
0
1
10
100
Collector current I_C (mA)
4
0
2
− 0.5
0
0.1
1
10
100
Collector current I_C (mA)
1
S11
S₂₂
−1.0
∞
−2.0
2
SJC00295BED