MSG43001 Datasheet, PDF (1/4 Pages) Panasonic Semiconductor – SiGe HBT type For low-noise RF amplifier

Transistors
MSG43001
SiGe HBT type
For low-noise RF amplifier
Unit: mm
■ Features
3
2
• Compatible between high breakdown voltage and high cutoff fre-
quency
• Low-noise, high-gain amplification
1
1.00±0.05
0.39⁺_−^00..0013
• Suitable for high-density mounting and downsizing of the equip-
ment for Ultraminiature leadless package
0.6 mm × 1.0 mm (height 0.39 mm)
0.25±0.05
0.25±0.05
1
■ Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) V_CBO
9
V
Collector-emitter voltage (Base open) V_CEO
6
V
Emitter-base voltage (Collector open) V_EBO
1
V
Collector current
I_C
30
mA
Collector power dissipation*
P_C
100
mW
Junction temperature
T_j
125
°C
Storage temperature
T_stg −55 to +125 °C
Note) _*: Copper plate at the collector is 5.0 cm² on substrate at 10 mm × 12
mm × 0.8 mm.
3
Marking Symbol: 3N
0.65±0.01
2
0.05±0.03
1: Base
2: Emitter
3: Collector
ML3-N2 Package
■ Electrical Characteristics T_a = 25°C ± 3°C
Parameter
Symbol
Conditions
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Transition frequency
Forward transfer gain
Noise figure
Collector output capacitance
(Common base, input open circuited)
I_CBO
I_CEO
I_EBO
h_FE
f_T
S_21e²
NF
C_ob
V_CB = 9 V, I_E = 0
V_CE = 6 V, I_B = 0
V_EB = 1 V, I_C = 0
V_CE = 3 V, I_C = 3 mA
V_CE = 3 V, I_C = 10 mA, f = 2 GHz
V_CE = 3 V, I_C = 10 mA, f = 2 GHz
V_CE = 3 V, I_C = 3 mA, f = 2 GHz
V_CB = 3 V, I_E = 0, f = 1 MHz
Min Typ Max Unit
1
µA
1
µA
1
µA
100
220

19
GHz
9.0 11.0
dB
1.4 2.0
dB
0.3 0.6
pF
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: October 2004
SJC00295BED
1