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MA4X796 Datasheet, PDF (2/2 Pages) Panasonic Semiconductor – Silicon epitaxial planar type
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MA4X796
Schottky Barrier Diodes (SBD)
IF  VF
103
102
Ta = 125°C
10
1
75°C
25°C
− 20°C
10−1
10−2
0
0.1 0.2 0.3 0.4 0.5 0.6
Forward voltage VF (V)
IR  Ta
104
VR = 50 V
103
30 V
10 V
102
10
1
10−1
−40 0
40 80 120 160 200
Ambient temperature Ta (°C)
VF  Ta
0.8
0.7
0.6
0.5
IF = 100 mA
0.4
0.3
0.2
10 mA
0.1
3 mA
0
−40 0 40 80 120 160 200
Ambient temperature Ta (˚C)
IR  VR
104
Ta = 125°C
103
75°C
102
10
25°C
1
10−1
0
10 20 30 40 50 60
Reverse voltage VR (V)
Ct  VR
60
50
40
30
20
10
0
0 10 20 30 40 50 60
Reverse voltage VR (V)
1 000
300
100
IF(surge)  tW
Ta = 25°C
IF(surge)
tW
30
10
3
1
0.3
0.1
0.03 0.1 0.3 1 3 10 30
Pulse width tW (ms)
2