MA4X796 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon epitaxial planar type

Schottky Barrier Diodes (SBD)
MA4X796
Silicon epitaxial planar type
For super-high speed switching circuit
For small current rectification
0.65 ± 0.15
2.8
+
−
0.2
0.3
+ 0.25
1.5 − 0.05
Unit : mm
0.65 ± 0.15
I Features
• Two MA3X787s in the same direction are contained in one package
• Allowing to rectify under (I_F(AV) = 100 mA) condition
• Optimum for high-frequency rectification because of its short
reverse recovery time (t_rr)
• Low V_F (forward rise voltage), with high rectification efficiency
• Reverse voltage V_R (DC value) = 50 V guaranteed
I Absolute Maximum Ratings T_a = 25°C
0.5 R
4
1
2
3
Parameter
Symbol
Rating
Unit
Reverse voltage (DC)
V_R
50
V
Repetitive peak reverse voltage V_RRM
50
V
Peak forward
Single
I_FM
300
mA
current
Double^*2ɹ
200
Average forward Single
I_F(AV)
100
mA
current
Double^*2ɹ
70
Non-repetitive peak forward
I_FSM
1
A
surge current^*1
Junction temperature
T_j
125
°C
Storage temperature
T_stg
−55 to +125
°C
Note) *1 : The peak-to-peak value in one cycle of 50 Hz sine-wave
(non-repetitive)
*2 : Value per chip
0.1 to 0.3
0.4 ± 0.2
1 : Cathode 1
2 : Cathode 2
3 : Anode 2
4 : Anode 1
Mini Type Package (4-pin)
Marking Symbol: M4B
Internal Connection
4
1
3
2
I Electrical Characteristics T_a = 25°C
Parameter
Reverse current (DC)
Forward voltage (DC)
Terminal capacitance
Reverse recovery time^*
Symbol
I_R
V_F
C_t
t_rr
Conditions
V_R = 50 V
I_F = 100 mA
V_R = 0 V, f = 1 MHz
I_F = I_R = 100 mA
I_rr = 10 mA, R_L = 100 Ω
Min Typ Max Unit
30
µA
0.55
V
25
pF
3
ns
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a
human body and the leakage of current from the operating equipment.
ɹ 2. Rated input/output frequency: 200 MHz
3. * : t_rr measuring circuit _{Bias Application Unit N-50BU}
Input Pulse
Output Pulse
t_r
t_p
10%
t
I_F
t_rr
t
A
Pulse Generator
(PG-10N)
R_s = 50 Ω
W.F.Analyzer
(SAS-8130)
R_i = 50 Ω
V_R
90%
t_p = 2 µs
t_r = 0.35 ns
δ = 0.05
I_rr = 10 mA
I_F = 100 mA
I_R = 100 mA
R_L = 100 Ω
1