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MA3X703 Datasheet, PDF (2/2 Pages) Panasonic Semiconductor – Silicon epitaxial planar type
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MA3X703
Schottky Barrier Diodes (SBD)
IF  VF
1
10−1
Ta = 125°C
75°C
25°C
10−2
− 20°C
10−3
10−4
10−5
0
0.1 0.2 0.3 0.4 0.5 0.6
Forward voltage VF (V)
IR  Ta
10 000
1 000
VR = 20 V
10 V
6V
3V
100
10
1
0.1
−40 0 40 80 120 160 200
Ambient temperature Ta (°C)
VF  Ta
0.8
0.7
0.6
0.5
IF = 500 mA
0.4
0.3
50 mA
0.2
5 mA
0.1
0
−40 0 40 80 120 160 200
Ambient temperature Ta (°C)
IR  VR
104
103
Ta = 125°C
102
75°C
10
1
25°C
10−1
0
5 10 15 20 25 30
Reverse voltage VR (V)
Ct  VR
80
Ta = 25°C
70
60
50
40
30
20
10
0
0 5 10 15 20 25 30
Reverse voltage VR (V)
1 000
300
100
IF(surge)  tW
Ta = 25°C
IF(surge)
tW
30
10
Breakdown point (typ.)
3
1
0.3
0.1
0.1 0.3 1 3 10 30 100
Pulse width tW (ms)
2