MA3X703 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon epitaxial planar type

Schottky Barrier Diodes (SBD)
MA3X703
Silicon epitaxial planar type
For high-frequency rectification
0.65 ± 0.15
+ 0.2
2.8 − 0.3
+ 0.25
1.5 − 0.05
Unit : mm
0.65 ± 0.15
I Features
• Mini type 3-pin package
•Allowing to rectify under (I_F(AV) = 500 mA) condition
• Low I_R(reverse current) type. (About 1/10 of I_R of the ordinary
products)
1
3
2
I Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol
Rating
Unit
Reverse voltage (DC)
V_R
20
V
Repetitive peak reverse voltage V_RRM
20
V
Average forward current
I_F(AV)
500
mA
Non-repetitive peak forward
I_FSM
3
A
surge current^*
Junction temperature
T_j
125
°C
Storage temperature
T_stg
−55 to +125
°C
Note) * : The peak-to-peak value in one cycle of 50 Hz sine-wave
(non-repetitive)
0.1 to 0.3
0.4 ± 0.2
1 : Anode
2 : NC
JEDEC : TO-236
3 : Cathode EIAJ : SC-59
Mini Type Package (3-pin)
Marking Symbol: M4R
Internal Connection
1
3
2
I Electrical Characteristics T_a = 25°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Reverse current (DC)
Forward voltage (DC)
Terminal capacitance
Reverse recovery time^*
I_R1
V_R = 10 V
I_R2
V_R = 5 V
V_F1
I_F = 500 mA
V_F2
I_F = 10 mA
C_t
V_R = 0 V, f = 1 MHz
t_rr
I_F = I_R = 100 mA
I_rr = 0.1 · I_R, R_L = 100 Ω
10
µA
1
µA
0.5 0.55
V
0.3 0.4
V
60
pF
5
ns
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a
human body and the leakage of current from the operating equipment.
ɹ 2. Rated input/output frequency: 400 MHz
3. * : t_rr measuring circuit
Bias Application Unit N-50BU
A
Pulse Generator
(PG-10N)
R_s = 50 Ω
W.F.Analyzer
(SAS-8130)
R_i = 50 Ω
Input Pulse
t_r
t_p
t
10%
V_R
90%
t_p = 2 µs
t_r = 0.35 ns
δ = 0.05
Output Pulse
I_F
t_rr
t
I_rr = 0.1·I_R
I_F = 100 mA
I_R = 100 mA
R_L = 100 Ω
1