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MA3U755 Datasheet, PDF (2/2 Pages) Panasonic Semiconductor – Silicon epitaxial planar type (cathode common)
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MA3U755
Schottky Barrier Diodes (SBD)
IF  VF
104
75°C 25°C
Ta = 125°C
103
− 20°C
102
10
1
10−1
0
0.2 0.4 0.6 0.8 1.0 1.2
Forward voltage VF (V)
VF  Ta
0.8
0.7
0.6
0.5
IF = 2.5 A
0.4
0.3
1A
0.2
100 mA
0.1
0
−40 0 40 80 120 160 200
Ambient temperature Ta (°C)
IR  VR
102
10
Ta = 125°C
1
75°C
10−1
10−2
25°C
10−3
0
10 20 30 40 50 60
Reverse voltage VR (V)
IR  Ta
102
VR = 60 V
10
30 V
10 V
1
10−1
10−2
10−3
−40 0
40 80 120 160 200
Ambient temperature Ta (°C)
Ct  VR
800
f = 1 MHz
Ta = 25°C
700
600
500
400
300
200
100
0
0 10 20 30 40 50 60
Reverse voltage VR (V)
2