 English |
|
|
|
|
|
|
|
| MA3U755 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon epitaxial planar type (cathode common) | |||
| |||
|
Schottky Barrier Diodes (SBD)
MA3U755
Silicon epitaxial planar type (cathode common)
For switching power supply
I Features
⢠Small U-type package and allowing surface mounting
⢠Low forward rise voltage VF
⢠Cathode common dual type
I Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
Repetitive peak reverse voltage VRRM
60
V
Average forward current
IF(AV)
5
A
Non-repetitive peak forward
IFSM
40
A
surge current*
Junction temperature
Storage temperature
Tj
â40 to +125
°C
Tstg
â40 to +125
°C
Note) * : Half sine-wave: 10 ms/cycle
6.5 ± 0.1
5.3 ± 0.1
4.35 ± 0.1
Unit : mm
2.3 ± 0.1
0.5 ± 0.1
0.93 ± 0.1
1.0 ± 0.1
0.1 ± 0.05
0.5 ± 0.1
0.75 ± 0.1
2.3 ± 0.1
4.6 ± 0.1
1
2
3
1 : Anode
2 : Cathode
(Common)
3 : Anode
U-Type Package
I Electrical Characteristics Ta = 25°C
Parameter
Symbol
Reverse current (DC)
Forward voltage (DC)
Thermal resistance*
IR
VF
Rth(j-c)
Note) Rated input/output frequency: 1 000 MHz
* : TC = 25°C
Conditions
VR = 60 V, TC = 25°C
IF = 2.5 A, TC = 25°C
Between junction and case
Min Typ Max Unit
1.0 mA
0.58
V
12.5 °C/W
1
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese