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MA3S781D Datasheet, PDF (2/2 Pages) Panasonic Semiconductor – Silicon epitaxial planar type
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MA3S781D
IF  VF
103
102
75°C 25°C
Ta = 125°C
− 20°C
10
1
10−1
10−2
0
0.2 0.4 0.6 0.8 1.0 1.2
Forward voltage VF (V)
IR  Ta
103
102
VR = 30 V
10 V
1V
10
1
10−1
10−2
−40 0
40 80 120 160 200
Ambient temperature Ta (°C)
Schottky Barrier Diodes (SBD)
VF  Ta
1.6
1.4
1.2
1.0
0.8
IF = 30 mA
0.6
0.4
3 mA
0.2
1 mA
0
−40 0 40 80 120 160 200
Ambient temperature Ta (°C)
IR  VR
103
102
Ta = 125°C
10
75°C
1
25°C
10−1
10−2
0
5 10 15 20 25 30
Reverse voltage VR (V)
Ct  VR
3.0
2.5
2.0
1.5
1.0
0.5
0
0 5 10 15 20 25 30
Reverse voltage VR (V)
1 000
300
100
IF(surge)  tW
Ta = 25°C
IF(surge)
tW
30
10
3
1
0.3
0.1
0.03 0.1 0.3 1 3 10 30
Pulse width tW (ms)
2