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| MA3S781D Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon epitaxial planar type | |||
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Schottky Barrier Diodes (SBD)
MA3S781D
Silicon epitaxial planar type
For high-speed switching circuits
1.60 ± 0.1
0.80
0.80 ± 0.05
Unit : mm
I Features
⢠SS-mini type 3-pin package
⢠Allowing high-density mounting
⢠Anode common type
1
3
2
I Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
Reverse voltage (DC)
VR
30
V
Peak reverse voltage
VRM
30
V
Forward current Single
IF
30
mA
(DC)
Double
20
Peak forward
Single
IFM
150
mA
current
Double
110
Junction temperature
Storage temperature
Tj
125
°C
Tstg
â55 to +125
°C
0.44 0.44
+ 0.05
0.88 â 0.03
1 : Cathode 1 3 : Anode 1
2 : Cathode 2
Anode 2
SS-Mini Type Package (3-pin)
Marking Symbol: M2P
Internal Connection
1
3
2
I Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Reverse current (DC)
Forward voltage (DC)
Terminal capacitance
Reverse recovery time*
Detection efficiency
IR
VR = 30 V
VF1
IF = 1 mA
VF2
IF = 30 mA
Ct
VR = 1 V, f = 1 MHz
trr
IF = IR = 10 mA
Irr = 1 mA, RL = 100 â¦
η
Vin = 3 V(peak), f = 30 MHz
RL = 3.9 kâ¦, CL = 10 pF
1.0
µA
0.4
V
1.0
V
1.5
pF
1.0
ns
65
%
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a
human body and the leakage of current from the operating equipment.
2. Rated input/output frequency: 2 000 MHz
3. * : trr measuring circuit
Bias Application Unit N-50BU
Input Pulse
Output Pulse
tr
tp
10%
t
IF
trr
t
A
Pulse Generator
(PG-10N)
Rs = 50 â¦
W.F.Analyzer
(SAS-8130)
Ri = 50 â¦
VR
90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
Irr = 1 mA
IF = 10 mA
IR = 10 mA
RL = 100 â¦
1
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