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MA3G762 Datasheet, PDF (2/2 Pages) Panasonic Semiconductor – Silicon epitaxial planar type (cathode common)
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MA3G762
Schottky Barrier Diodes (SBD)
IF  VF
102
10
100°C
Ta = 125°C
25°C
1
10−1
10−2
10−3
0
0.2 0.4 0.6 0.8 1.0 1.2
Forward voltage VF (V)
IR  VR
102
Ta = 125°C
10
100°C
1
10−1
10−2
25°C
10−3
0
20 40 60 80 100 120
Reverse voltage VR (V)
IF(AV)  TC
32
28
t0
t1
24
20
t0 / t1 = 1/2
1/3
16
1/6
12
DC
8
4
0
20 40 60 80 100 120 140
Case temperature TC (°C)
PD(AV)  IF(AV)
40
35
t0
t1
t0 / t1 = 1/6
30
25
1/3
20
1/2
DC
15
10
5
0
0 4 8 12 16 20 24
Average forward current IF(AV) (A)
2