MA3G762 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon epitaxial planar type (cathode common)

Schottky Barrier Diodes (SBD)
MA3G762
Silicon epitaxial planar type (cathode common)
For switching power supply
15.0 ± 0.5
7.2 ± 0.3
Unit : mm
5.0 ± 0.2
3.2 ± 0.2
I Features
• Forward current (average) I_F(AV): 20 A type
• Repetitive peak reverse voltage V_RRM: 90 V type
• High reliability caused by sealed in the TOP-3F (Full-pack
package)
• Cathode common dual type
I Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol
Rating
Unit
Repetitive peak reverse voltage V_RRM
90
V
Average forward current
I_F(AV)
20
A
Non-repetitive peak forward
I_FSM
130
A
surge current^*
Junction temperature
Storage temperature
T_j
−40 to +125
°C
T_stg
−40 to +125
°C
Note) * : Sine half-wave; 10 ms/cycle
φ 3.2 ± 0.1
2.0 ± 0.1
1.1 ± 0.1
5.45 ± 0.3
10.9 ± 0.5
123
2.0 ± 0.1
0.6
+
−
0.2
0.1
1 : Anode
2 : Cathode
(Common)
3 : Anode
TOP-3F (TO-3F Full-Pack Package )
Marking Symbol: MA3G762
Internal Connection
123
I Electrical Characteristics T_a = 25°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Reverse current (DC)
Forward voltage (DC)
Thermal resistance
I_R
V_F
R_th(j-c)
V_R = 90 V
I_F = 10 A
Direct current (between junction and case)
5
mA
0.85
V
1.5 °C/W
Note) Rated input/output frequency: 100 MHz
1