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MA2J11100L Datasheet, PDF (2/3 Pages) Panasonic Semiconductor – MA2J11100L Silicon epitaxial planar type
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MA2J111
This product complies with the RoHS Directive (EU 2002/95/EC).
IF  VF
103
IR  VR
102
Ta = 150°C
VF  Ta
1.6
102
10
1.2
100°C
10
IF = 100 mA
1
0.8
1
Ta = 150°C
100°C
10 mA
/ 10 −1
25°C
10 −1
−20°C
3 mA
0.4
25°C
e . 10−2
c tage 0
0.2 0.4 0.6 0.8 1.0 1.2
Forward voltage VF (V)
10 −2
0
20 40 60 80 100 120
Reverse voltage VR (V)
0
−40 0 40 80 120 160 200
Ambient temperature Ta (°C)
an edlifecycles IRTa
t 102
c VR = 75 V
n u rodu 35V
P 10
1V
te tinwingfoutrype tion. 1
ain onludes foilnlotenanceetype typed informan/ 10−1
c ued incned maintenancontinuedd type t latest .co.jp/e 10−2
M is tin la a c e u ic −40 0
40 80 120 160 200
DMaintenance/Discon pPleaspemlavnihsetittdpfo:dd/l/iliwsoscwwoiwnn.gtsineUumRiLcoanb.opanason Ambient temperature Ta (°C)
Ct  VR
IF(surge)  tW
0.8
103
f = 1 MHz
Ta = 25°C
Ta = 25°C
IF(surge)
tW
0.6
102
Non repetitive
0.4
10
0.2
1
0
0 20 40 60 80 100 120
Reverse voltage VR (V)
10 −1
10 −1
1
10
Pulse width tW (ms)
2
SKF00011BED
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