MA2J11100L Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – MA2J11100L Silicon epitaxial planar type

This product complies with the RoHS Directive (EU 2002/95/EC).
Switching Diodes
MA2J111 (MA111)
Silicon epitaxial planar type
For switching circuits
■ Features
• Allowing high-density mounting
/ _{• Short reverse recovery time trr}
• Small terminal capacitance C_t
e _{• High breakdown voltage: VR = 80 V}
c _{tage. ■ Absolute Maximum Ratings Ta = 25°C}
n ^d le ^s Parameter
Symbol Rating
Unit
a ^{e cyc Reverse voltage}
V_R
80
V
life Maximum peak reverse voltage V_RM
80
V
ct _{Forward current}
I_F
100
mA
n ^u _{rodu Peak forward current}
I_FM
225
mA
P _{Non-repetitive peak forward}
I_FSM
500
mA
te ^{tin ur surgecurrent*}
g ^{fo e .} Junction temperature
win ^{typ tion Storage temperature}
T_j
150
°C
T_stg
−55 to +150
°C
in ^{n follo ance pe ed rma Note) *: t = 1 s}
1.25±0.1
0.35±0.1
Unit: mm
0.7±0.1
1
0 to 0.1
2
0.5±0.1
5˚
0.16^{+–00..016}
1: Anode
2: Cathode
EIAJ: SC-76
Marking Symbol: 1B
SMini2-F1 Package
Ma _isct^{oinued inlcalnueddesmaaiinntteenniasnccoenttiynuueeddttyyppoeut latesnticin.cfoo.jp/en/ ■ Electrical Characteristics Ta = 25°C ± 3°C}
on ^{p m d d ntin ab aso Parameter}
Symbol
Conditions
Min Typ Max Unit
isc ^{ne co RL an Forward voltage}
/D ^{pla dis g U n.p Reverse voltage}
D _{ce win} ^ico _{Reverse current}
tenan ^{follo .sem Terminal capacitance}
Main e ^{visit ://www Reverse recovery time *}
V_F
I_F = 100 mA
V_R
I_R = 100 µA
I_R
V_R = 75 V
C_t
V_R = 0 V, f = 1 MHz
t_rr
I_F = 10 mA, V_R = 6 V
I_rr = 0.1 I_R , R_L = 100 Ω
0.95 1.20
V
80
V
100 nA
0.6 1.2
pF
3
ns
as ttp ^{Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.}
le ^{h 2. Absolute frequency of input and output is 100 MHz.}
P _{3. *: trr measurement circuit}
Bias Application Unit (N-50BU)
Input Pulse
Output Pulse
t_r
t_p
10%
t
I_F
t_rr
t
A
Pulse Generator
(PG-10N)
R_s = 50 Ω
Wave Form Analyzer
(SAS-8130)
V_R
90%
t_p = 2 µs
t_r = 0.35 ns
δ = 0.05
I_rr = 0.1 I_R
I_F = 10 mA
V_R = 6 V
R_L = 100 Ω
R_i = 50 Ω
Note) The part number in the parenthesis shows conventional part number.
Publication date: March 2004
SKF00011BED
1