MA2C859 Datasheet, PDF (2/2 Pages) Panasonic Semiconductor – Band Switching Diodes

MA2C859
Band Switching Diodes
I_F  V_F
10²
10
1
10^−1
Ta = 85°C
− 20°C
10^−2
50°C 25°C
10^−3
0
0.2 0.4 0.6 0.8 1.0 1.2
Forward voltage V_F (V)
I_R  V_R
10³
Ta = 85°C
10²
50°C
10
25°C
1
10^−1
0
10 20 30 40 50
Reverse voltage V_R (V)
I_R  T_a
10³
10²
V_R = 33 V _{20 V}
10
1
10^−1
−40
0
40
80
120
Ambient temperature T_a (°C)
r_f  f
10
IF = 2 mA
Ta = 25°C
rf Tester: TDC-121A
8
6
4
2
0
1
3
10
30
100
Frequency f (MHz)
r_f  f
16
IF = 2 mA
14
Ta = 25°C
rf Tester: YHP4191A
12
10
8
6
4
2
0
1 2 3 5 10 20 30 50 100
Frequency f (MHz)
r_f  I_f
3.2
f = 100 MHz
2.8
Ta = 25°C
rf Tester: TDC-121A
2.4
2.0
1.6
1.2
0.8
0.4
0
0.1
1
10
100
Forward current I_F (mA)
r_f  I_F
3.2
f = 1 000 MHz
2.8
T_a = 25°C
r_f Tester: YHP4191A
2.4
2.0
1.6
1.2
0.8
0.4
0
0.1 0.3 1 3 10 30 100
Forward current I_F (mA)
C_t  V_R
2.0
f = 1 MHz
T_a = 25°C
1.6
1.2
0.8
0.4
0
0
10 20 30 40 50
Reverse voltage V_R (V)
1 000
I_f(surge)  t_W
100
10
1
0.1
0.03 0.1 0.3 1 3 10 30
Pulse width t_W (ms)
2