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| MA2C859 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Band Switching Diodes | |||
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Band Switching Diodes
MA2C859
Silicon epitaxial planar type
For band switching
I Features
⢠Extra-small DHD envelope, allowing to insert into a 5 mm pitch
hole
⢠Less voltage dependence of the terminal capacitance Ct
⢠Low forward dynamic resistance rf
⢠Optimum for a band switching of a tuner
I Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
Reverse voltage (DC)
Forward current (DC)
Operating ambient temperature
Storage temperature
VR
35
V
IF
100
mA
Topr
â25 to +85
°C
Tstg
â55 to +100
°C
Unit : mm
Ï 0.45 max.
COLORED BAND
1
INDICATES
CATHODE
1st Band
2nd Band
2
Ï 1.75 max.
1 : Cathode
2 : Anode
JEDEC : DO-34
I Electrical Characteristics Ta = 25°C
Parameter
Reverse current (DC)*1
Forward voltage (DC)
Terminal capacitance
Forward dynamic resistance
Symbol
IR
VF
Ct
rf*2
rf*3
Conditions
VR = 33 V
IF = 100 mA
VR = 6 V, f = 1 MHz
IF = 2 mA, f = 100 MHz
Min Typ Max Unit
100 nA
1.0
V
0.8 1.2
pF
0.5 0.65
â¦
0.77 0.98
â¦
Note) 1ɽRated input/output frequency: 100 MHz
ɹ 2ɽ*1 : Measurement in light shielded condition
ɹ
*2 : rf measuring instrument: Nihon Koshuha MODEL TDC-121A Lead length 5mm
ɹ
*3 : rf measuring instrument: YHP 4191A Lead length 5mm
I Cathode Indication
Type No.
MA2C859
Color 1st Band Black
2nd Band Blue
1
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