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MA2C178 Datasheet, PDF (2/2 Pages) Panasonic Semiconductor – Silicon epitaxial planar type
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MA2C178, MA2C179
Switching Diodes
Bias Application Unit N-50BU
Input Pulse
tr
tp
t
10%
A
Pulse Generator
(PG-10N)
Rs = 50 Ω
W.F.Analyzer
(SAS-8130)
Ri = 50 Ω
VR
90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
trrmeasuring circuit
Output Pulse
IF
trr
t
Irr = 0.1 · IR
IF = 10 mA
VR = 1 V
RL = 100 Ω
Common characteristics charts
IF  VF
103
102
10
1
Ta = 150°C
100°C
25°C
10−1
− 20°C
10−2
0
0.2 0.4 0.6 0.8 1.0 1.2
Forward voltage VF (V)
Characteristics charts of MA2C178
IR  Ta
102
102
10
VR = 35 V
10
15 V
1
1
IR  VR
Ta = 150°C
100°C
10−1
10−2
10−1
10−2
25°C
10−3
0
40 80 120 160
Ambient temperature Ta (°C)
10−3
0
10 20 30 40 50
Reverse voltage VR (V)
Characteristics charts of MA2C179
IR  Ta
102
102
VR = 75 V
10
15 V
10
1
1
IR  VR
Ta = 150°C
100°C
10−1
10−2
10−1
25°C
10−2
10−3
0
40 80 120 160
Ambient temperature Ta (°C)
2
10−3
0
10 20 30 40 50
Reverse voltage VR (V)
VF  Ta
1.2
1.0
IF = 200 mA
0.8
0.6
10 mA
0.4
3 mA
0.2
0
−40 0
40 80 120 160
Ambient temperature Ta (°C)
Ct  VR
10
f = 1 MHz
Ta = 25°C
5
3
2
1
0.5
0.3
0.2
0.1
0
10 20 30 40 50
Reverse voltage VR (V)