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| MA2C178 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon epitaxial planar type | |||
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Switching Diodes
MA2C178, MA2C179
Silicon epitaxial planar type
For high-speed switching circuits
I Features
⢠Large forward current IFRM
⢠High switching speed
⢠Small terminal capacitance, Ct
I Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
Reverse voltage MA2C178
VR
40
V
(DC)
MA2C179
80
Repetitive peak MA2C178 VRRM
40
V
reverse voltage MA2C179
80
Average forward current
IF(AV)
200
mA
Repetitive peak forward current IFRM
600
mA
Non-repetitive peak forward
IFSM
1
A
surge current*
Junction temperature
Storage temperature
Note) * : t = 1 s
Tj
200
°C
Tstg
â55 to +200
°C
I Electrical Characteristics Ta = 25°C
Parameter
Symbol
Conditions
Reverse current (DC) MA2C178
IR1
MA2C179
VR = 15 V
MA2C178
IR2
MA2C179
MA2C178
IR
MA2C179
Forward voltage (DC)
VF
Terminal capacitance
Ct
Reverse recovery time*
trr
VR = 35 V
VR = 75 V
VR = 35 V, Ta = 150°C
VR = 75 V, Ta = 150°C
IF = 200 mA
VR = 0 V, f = 1 MHz
IF = 10 mA, VR = 1 V
Irr = 0.1 · IR, RL = 100 â¦
Note) 1. Rated input/output frequency: 50 MHz
2. * : trr measuring circuit
I Cathode Indication
Type No.
MA2C178 MA2C179
Color 1st Band Violet
Violet
2nd Band White
Green
Unit : mm
Ï 0.45 max.
COLORED BAND
1
INDICATES
CATHODE
1st Band
2nd Band
2
Ï 1.75 max.
1 : Cathode
2 : Anode
JEDEC : DO-34
Min Typ Max Unit
50
nA
500 nA
500
100 µA
100
1.1
V
4
pF
20
ns
1
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