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MA2B150 Datasheet, PDF (2/2 Pages) Panasonic Semiconductor – Silicon epitaxial planar type
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MA2B150, MA2B161, MA2B162, MA2B162A
Switching Diodes
Bias Application Unit N-50BU
A
Pulse Generator
(PG-10N)
Rs = 50 Ω
W.F.Analyzer
(SAS-8130)
Ri = 50 Ω
Input Pulse
tr
tp
t
10%
VR
90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
Output Pulse
IF
trr
t
Irr = 0.1 · IR
IF = 10 mA
VR = 6 V
RL = 100 Ω
trr measuring circuit
IF  VF
103
102
10
1
Ta = 150°C
75°C
25°C
10−1
− 20°C
10−2
0
0.2 0.4 0.6 0.8 1.0 1.2
Forward voltage VF (V)
IR  VR
102
MA2B150
Ta = 150°C
10
100°C
1
10−1
25°C
10−2
10−3
0
10
20
30
40
Reverse voltage VR (V)
102
MA2B161
MA2B162
MA2B162A
IR  VR
Ta = 150°C
10
100°C
1
10−1
10−2
25°C
10−3
0
20
40
60
80 100
Reverse voltage VR (V)
IR  Ta
102
MA2B150
10
VR = 35 V
15 V
1
10−1
10−2
10−3
0
40 80 120 160 200
Ambient temperature Ta (°C)
IR  Ta
102 MA2B161 VR = 120 V
MA2B162
MA2B162A
75 V
50 V
10
20 V
1
10−1
10−2
10−3
0
40 80 120 160 200
Ambient temperature Ta (°C)
VF  Ta
1.0
0.8
IF = 20 mA
0.6
10 mA
0.4
1 mA
0.2
0.1 mA
0
−40 0
0.01 mA
40 80 120 160 200
Ambient temperature Ta (°C)
Ct  VR
2.0
f = 1 MHz
Ta = 25°C
1.6
1.2
MA2B150
MA2B161, MA2B162, MA2B162A
0.8
0.4
0
0
4
8
12 16 20
Reverse voltage VR (V)
2