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MA2B150 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon epitaxial planar type
Switching Diodes
MA2B150, MA2B161, MA2B162, MA2B162A
Silicon epitaxial planar type
For switching circuits
I Features
• Short reverse recovery time trr
• Small terminal capacitance, Ct
I Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
Reverse voltage MA2B150
VR
35
V
(DC)
MA2B161
50
MA2B162
75
MA2B162A
120
Repetitive peak MA2B150
VRRM
35
V
reverse voltage MA2B161
50
MA2B162
75
MA2B162A
120
Average forward current
IF(AV)
100
mA
Repetitive peak forward current IFRM
225
mA
Non-repetitive peak forward
IFSM
500
mA
surge current*
Junction temperature
Storage temperature
Tj
200
°C
Tstg
−55 to +150
°C
Note) * : t = 1 s
φ 0.56 max.
1
COLORED BAND
INDICATES
CATHODE
Unit : mm
1st Band
2nd Band
2
φ 1.95 max.
1 : Cathode
2 : Anode
JEDEC : DO-35
I Electrical Characteristics Ta = 25°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Reverse current (DC) MA2B150
IR
MA2B161
MA2B162
MA2B162A
MA2B150
MA2B161
MA2B162
MA2B162A
Forward voltage (DC)
VF
Reverse voltage (DC) MA2B150
VR
Terminal capacitance
Ct
Reverse recovery time* MA2B150
trr
MA2B161/162/162A
VR = 15 V
VR = 30 V
VR = 15 V
VR = 50 V
VR = 20 V
VR = 75 V
VR = 20 V
VR = 120 V
VR = 35 V, Ta = 150°C
VR = 50 V, Ta = 150°C
VR = 75 V, Ta = 150°C
VR = 75 V, Ta = 150°C
IF = 100 mA
IR = 5 µA
VR = 0 V, f = 1 MHz
IF = 10 mA, VR = 1 V, RL = 100 Ω
Measure when Irr = 0.1 · IR
0.025 µA
0.1
0.025
5
0.012 0.025
5
0.012 0.025
5
100
100
50 100
50 100
0.95 1.2
V
35
V
0.9
2
pF
10
ns
2.2
4
I Cathode Indication
Type No.
MA2B150 MA2B161
Color 1st Band White
Green
MA2B162 MA2B162A
Violet
Black
Note) 1. Rated input/output frequency:
100 MHz
2. * : trr measuring circuit
2nd Band 


Black
1
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