LN51F Datasheet, PDF (2/2 Pages) Panasonic Semiconductor – GaAs Infrared Light Emitting Diodes

LN51F, LN51L
Infrared Light Emitting Diodes
I_F — Ta
120
100
80
60
40
20
0
– 25 0
20 40 60 80 100
Ambient temperature Ta (˚C )
I_FP — Duty cycle
10 ²
t_w = 10µs
Ta = 25˚C
10
1
10 ^–1
10 ^–2
10 ^–1
1
10
10 ²
Duty cycle (%)
I_F — V_F
120
Ta = 25˚C
100
80
60
40
20
0
0
0.4 0.8 1.2 1.6 2.0
Forward voltage V_F (V)
I_FP — V_F
10 ⁴
10 ³
10 ²
10
1
10 ^–1
0
t_w = 10µs
Duty Cycle = 0.1%
Ta = 25˚C
1
2
3
4
5
Forward voltage V_F (V)
∆P_O — I_FP
∆P_O — Ta
10
10 ³
(1) t_w = 10µs
Duty Cycle = 0.1%
(2) DC
Ta = 25˚C
I_F = 100mA
10 ²
(1)
10
1
1
(2)
10 ^–1
10 ^–2
1
10
10 ²
10 ³
10 ⁴
Pulse forward current I_FP (mA)
10 ^–1
– 40
0
40
80
Ambient temperature Ta (˚C )
Spectral characteristics
100
I_F = 100mA
Ta = 25˚C
80
60
40
20
0
800 850 900 950 1000 1050 1100
Wavelength λ (nm)
Directivity characteristics
0˚
10˚ 20˚
100
Ta = 25˚C
LN51F
90
80
30˚
70
60
LN51L
40˚
50
40
50˚
30
60˚
20
70˚
80˚
90˚
Frequency characteristics
10 ²
Ta = 25˚C
10
1
10 ^–1
10 ^–2
10
10 ²
10 ³
10 ⁴
Frequency f (kHz)
2