LN51F Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – GaAs Infrared Light Emitting Diodes

Infrared Light Emitting Diodes
LN51F, LN51L
GaAs Infrared Light Emitting Diodes
LN51F
ø4.6±0.15
Unit : mm
Glass window
For optical control systems
Features
High-power output, high-efficiency : P_O = 6 mW (typ.)
Fast response : t_r, t_f = 1 µs (typ.)
Infrared light emission close to monochromatic light :
λ_P =950 nm (typ.)
Narrow directivity, suitable for effective use of optical output :
θ = 8 deg. (LN51L)
Wide directivity, matched for external optical systems :
θ = 32 deg. (LN51F)
TO-18 standard type package
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Symbol Ratings Unit
Power dissipation
Forward current (DC)
Pulse forward current
Reverse voltage (DC)
Operating ambient temperature
Storage temperature
* _{f = 100 Hz, Duty cycle = 0.1 %}
P_D
150
mW
I_F
100
mA
I_FP*
2
A
V_R
5
V
T_opr –25 to +100 ˚C
T_stg –30 to +100 ˚C
2-ø0.45±0.05
2.54±0.25
1.0^±0.15
1.0_±0.2
21
ø5.75 max.
1: Cathode
2: Anode
LN51L
ø4.6±0.15
Unit : mm
Glass lens
2-ø0.45±0.05
2.54±0.25
1.0^±0.15
1.0_±0.2
21
Electro-Optical Characteristics (Ta = 25˚C)
Parameter
Radiant power
Peak emission wavelength
Spectral half band width
Forward voltage (DC)
Reverse current (DC)
Capacitance between pins
Rise time
Fall time
Half-power angle
LN51F
LN51L
Symbol
P_O
λ_P
∆λ
V_F
I_R
C_t
t_r
t_f
θ
Conditions
I_F = 100mA
I_F = 100mA
I_F = 100mA
I_F = 100mA
V_R = 5V
V_R = 0V, f = 1MHz
I_FP = 100mA
The angle in which radiant intencity is 50%
ø5.75 max.
1: Cathode
2: Anode
min typ max Unit
3
6
mW
950
nm
50
nm
1.25 1.5
V
0.005 10
µA
50
pF
1
µs
1
µs
32
deg.
8
deg.
1