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LN151F Datasheet, PDF (2/2 Pages) Panasonic Semiconductor – GaAs Infrared Light Emitting Diodes | |||
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Infrared Light Emitting Diodes
LN151F, LN151L
IF â Ta
120
100
80
60
40
20
0
â 25 0
20 40 60 80 100
Ambient temperature Ta (ËC )
IFP â Duty cycle
10 2
tw = 10µs
Ta = 25ËC
10
1
10 â1
10 â2
10 â1
1
10
10 2
Duty cycle (%)
IFP â VF
tw = 10µs
10 3
f = 100Hz
Ta = 25ËC
10 2
10
1
10 â1
10 â2
0
1
2
3
4
5
Forward voltage VF (V)
VF â Ta
âPO â IFP
âPO â Ta
1.6
10
10 3
(1) tw = 10µs
Duty Cycle = 0.1%
(2) DC
Ta = 25ËC
IF = 100mA
1.2
10 2
IF = 50mA
50mA
(1)
10mA
10
0.8
1
1
(2)
0.4
10 â1
0
â 40
0
40
80
120
Ambient temperature Ta (ËC )
10 â2
1
10
10 2
10 3
10 4
Pulse forward current IFP (mA)
10 â1
â 40
0
40
80
Ambient temperature Ta (ËC )
Spectral characteristics
100
IF = 100mA
Ta = 25ËC
80
60
40
20
0
800 850 900 950 1000 1050 1100
Wavelength λ (nm)
Directivity characteristics
0Ë
10Ë 20Ë
100
Ta = 25ËC
90
LN151F
80
30Ë
70
60
40Ë
50
LN151L 40
50Ë
30
60Ë
20
70Ë
80Ë
90Ë
Frequency characteristics
10 2
Ta = 25ËC
10
1
10 â1
10 â2
10
10 2
10 3
10 4
Frequency f (kHz)
2
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